BU536 transistor equivalent, npn transistor.
*Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 480V(Min.)
*High Speed Switching
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in swit.
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