BFG425W transistor equivalent, npn transistor.
*Designed for use in RF wideband amplifiers and oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*High Power Gain
*High Current Gain Bandwidth Product
*Low Noise Figure
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in RF wideband amplifiers and oscillators..
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