BDY93 transistor equivalent, npn transistor.
*Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min)
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use as high-speed power switch at high
v.
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