BDY49 transistor equivalent, npn transistor.
*Designed for high current, high speed, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
*Excellent Safe Operating Area
*High Current Capability
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLI.
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