BDY29 transistor equivalent, npn transistor.
*Designed for use in high power ,high current and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 75V (Min)
*Low Collector-Emitter Saturation Voltage
*Excellent Safe Operating Area
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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