BDX75 transistor equivalent, npn transistor.
*Designed for use in general-purpose amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V (Min)
*High Current Capability
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in gen.
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