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BDX66A - PNP Transistor

Download the BDX66A datasheet PDF. This datasheet also covers the BDX66 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching appl

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Note: The manufacturer provides a single datasheet file (BDX66-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX66 -80 VCBO Collector-Base Voltage BDX66A BDX66B -100 -120 BDX66C -140 BDX66 -60 VCEO Collector-Emitter Voltage BDX66A BDX66B -80 -100 BDX66C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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