BDW53 transistor equivalent, npn transistor.
*Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*High DC Current Gain
: hFE= 750(Min.)@ IC= 1.5A, VCE= 3V
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)
*Low Collector Saturation Voltage
*Complement to Type BDW54
*Minimum Lot-to-Lot variations for robust devic.
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