BDW52C transistor equivalent, silicon pnp power transistor.
*Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*Collector Current -IC= -15A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A -80V(Min)- BDW52B; -100V(Min)- BDW52C
*Complement to Type BDW51/A/B/C
*Minimum Lot-to-Lot variations for robust devi.
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