| Part number | BDT62B |
|---|---|
| Download | BDT62B Datasheet (PDF) |
| File Size | 216.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistors |
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| Manufacturer | Part Number | Description |
|---|---|---|
MAGNA TEC |
BDT62B | Silicon Darlington Power Transistors |
|
MAGNA TEC |
BDT62 | Silicon Darlington Power Transistors |
|
MAGNA TEC |
BDT62A | Silicon Darlington Power Transistors |
|
MAGNA TEC |
BDT62C | Silicon Darlington Power Transistors |
·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; MAX UNIT 1.39 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT62 V(BR)CEO Collector-Emitter Breakdown Voltage BDT62A BDT62B IC= -30mA;.
