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BD943F INCHANGE NPN Transistor

Description ·DC Current Gain- : hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944F/946F/948F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD943F 22 VCBO Collector-Base Voltage BD945F 32 V BD947F 45 B...
Features ower Transistor BD943F/945F/947F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943F BD945F BD947F IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD943F/945F IC= 2A; IB= 0.2A BD947F IC= 3A; IB= 0.3A VBE(on) ICBO ICEO Base-Emitt...

Datasheet PDF File BD943F Datasheet - 210.94KB

BD943F  






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