BD907 transistor equivalent, silicon npn power transistor.
*Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*DC Current Gain -
: hFE = 40@ IC= 0.5A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
*Complement to Type BD908
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desi.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 212.40KB)