BD895 transistor equivalent, npn transistor.
*Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
*High DC Current Gain
: hFE= 750(Min) @IC= 3A
*Collector Power Dissipation-
: PC= 70W@ TC= 25℃
*8 A Continuous Collector Current
*Complement to Type BD896
*Minimum Lot.
Image gallery
TAGS
Download (Size : 207.90KB)