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BD895 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) High DC Current Gain : hFE= 750(Min) @IC= 3A Collector Power Dissipation- : PC= 70W@ TC= 25℃ 8 A Continuous Collector Current Complement to Type BD896 Minimum Lot-to-Lot variations for robust device performance a

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isc Silicon NPN Darlington Power Transistor BD895 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD896 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 45 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Current-Continuous 0.
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