BD841 transistor equivalent, npn transistor.
*Designed for use in television circuits and audio applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*High DC Current Gain
*Low Saturation Voltage
*Complement to Type BD842
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS <.
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