BD652F transistor equivalent, pnp transistor.
*Designed for use as complementary AF push-pull output
stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*High DC Current Gain
*Low Saturation Voltage
*Complement to Type BD651F
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS.
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