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BD650 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain : hFE= 750(Min) @IC= -3A Low Saturation Voltage Complement to Type BD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 2 W 62.
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