BD636 transistor equivalent, silicon pnp power transistor.
*Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI.
*DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
*Complement to Type BD635
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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