BD347 transistor equivalent, npn transistor.
*Designed for RF power and general-purpose audio amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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P.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 3A
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device performance
and reliable operatio.
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