Part Number | BD337 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High DC Current Gain ·Complement to type BD338 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... |
Features |
HANGE Semiconductor
BD337
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VB...
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Datasheet | BD337 Datasheet 205.75KB |