BD226 transistor equivalent, silicon npn power transistor.
*Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
*DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A
*Complement to Type BD227/229/231
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in driver stages in television circuits.
.
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