BD224 transistor equivalent, pnp transistor.
*Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
*DC Current Gain -hFE =30(Min)@ IC= -0.3A
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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