DC Current Gain-
: hFE= 63(Min)@ IC= -0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -80V(Min)
Complement to type BD139
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as audio amplifiers and driver
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD140. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 DESCRIPTION ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)...
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3(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD139 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -100 V -80 V
BD140 Datasheet
