Datasheet Details
| Part number | APT6029BLL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 371.45 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 APT6029BLL Datasheet
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| Part number | APT6029BLL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 371.45 KB |
| Description | N-Channel MOSFET |
| Datasheet |
APT6029BLL Datasheet
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Pluse 84 A PD Total Dissipation @TC=25℃ 300 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.42 ℃/W APT6029BLL isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT6029BLL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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APT6029BLL | Power MOSFET | Advanced Power Technology |
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APT6029BFLL | Power MOSFET | Advanced Power Technology |
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APT6029SFLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | Advanced Power Technology |
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APT6029SLL | Power MOSFET | Advanced Power Technology |
| Part Number | Description |
|---|---|
| APT6029BFLL | N-Channel MOSFET |
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