Datasheet Details
| Part number | APT50M80B2VFR |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 371.36 KB |
| Description | N-Channel MOSFET |
| Download | APT50M80B2VFR Download (PDF) |
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| Part number | APT50M80B2VFR |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 371.36 KB |
| Description | N-Channel MOSFET |
| Download | APT50M80B2VFR Download (PDF) |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pluse 232 A PD Total Dissipation @TC=25℃ 625 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.20 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT50M80B2VFR ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor APT50M80B2VFR.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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APT50M80B2VFR | Power MOSFET | Advanced Power Technology |
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APT50M80B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology |
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APT50M80B2LC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology |
| Part Number | Description |
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