Datasheet4U Logo Datasheet4U.com

APT50M80B2VFR - N-Channel MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – APT50M80B2VFR

Datasheet Details

Part number APT50M80B2VFR
Manufacturer INCHANGE
File Size 371.36 KB
Description N-Channel MOSFET
Datasheet download datasheet APT50M80B2VFR-INCHANGE.pdf
Additional preview pages of the APT50M80B2VFR datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pluse 232 A PD Total Dissipation @TC=25℃ 625 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

📁 Similar Datasheet

  • APT50M80B2VR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT50M80B2LC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT50M80JLC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT50M80LLC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT50M80LVFR - Power MOSFET (Advanced Power Technology)
  • APT50M80LVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT50M85B2VFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT50M85B2VR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
Other Datasheets by INCHANGE
Published: |