Datasheet4U Logo Datasheet4U.com

APT5010LVR - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID=47A@ TC=25℃.
  • Drain Source Voltage- : VDSS=500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
APT5010LVR Power MOSFET Advanced Power Technology
APT5010LVFR Power MOSFET Advanced Power Technology
APT5010LFLL Power MOSFET Advanced Power Technology
APT5010LLC high voltage N-Channel enhancement mode power MOSFET Advanced Power Technology
APT5010LLL Power MOSFET Advanced Power Technology

Other Datasheets by Inchange Semiconductor

Part Number Description
APT5010LVFR N-Channel MOSFET
APT5010LFLL N-Channel MOSFET
APT5010LLL N-Channel MOSFET
APT5010B2FLL N-Channel MOSFET
APT5010B2LL N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=47A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 47 A IDM Drain Current-Single Pluse 188 A PD Total Dissipation @TC=25℃ 520 W TJ Max.