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AOTF286L - N-Channel MOSFET

Features

  • Drain Current.
  • ID= 56A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 80V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor AOTF286L ·FEATURES ·Drain Current –ID= 56A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pulsed 225 A PD Total Dissipation @TC=25℃ 37.5 W Tj Max.
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