Datasheet4U Logo Datasheet4U.com

AOT3N60 - N-Channel MOSFET

Description

purpose applications.

Features

  • Drain Current.
  • ID= 2.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS=600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOT3N60 600V N-Channel MOSFET Alpha & Omega Semiconductors
AOT3N100 N-Channel MOSFET Alpha & Omega Semiconductors
AOT3N50 3A N-Channel MOSFET Alpha & Omega Semiconductors
AOT360A70L N-Channel Power Transistor Alpha & Omega Semiconductors
AOT380A60L N-Channel Power Transistor Alpha & Omega Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number Description
AOT3N100 N-Channel MOSFET
AOT3N50 N-Channel MOSFET
AOT10N60 N-Channel MOSFET
AOT10N65 N-Channel MOSFET
AOT1100L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor AOT3N60 FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 8.0 A PD Total Dissipation @TC=25℃ 59.5 W TJ Max.
Published: |