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AOD514 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤5.9mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.9mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC/DC Converters in Computing ·Isolated DC/DC Converters in Telecom and Industrial ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 46 IDM Drain Current-Single Pulsed 163 PD Total Dissipation @TC=25℃ 50 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 3.0 UNIT ℃/W AOD514 isc website：www.iscsemi.
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