A795 - Silicon PNP Power Transistor

Datasheet Summary

Description

Large Collector Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Good Linearity of hFE Complement to Type 2SC1565 APPLICATIONS Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll

INCHANGE

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Datasheet Details

Part number	A795
Manufacturer	INCHANGE
File Size	78.37 KB
Description	Silicon PNP Power Transistor
Datasheet	A795 Datasheet
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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -150 -5 -1 -1.5 10 150 -55~150 V V A A W ℃ ℃ isc Product Specification 2SA795 isc Website：www.iscsemi.

Published: Jul 3, 2015 |