A795 Overview
·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA;.
| Part number | A795 |
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| Datasheet | A795-INCHANGE.pdf |
| File Size | 78.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
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