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A1964 - Silicon PNP Power Transistor

Description

Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­160V(Min)  Good Linearity of hFE  Wide Area of Safe Operation  Complement to Type 2SC5248  APPLICATIONS 

Power amplifier applications.

Driver stage amplifier applications.

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INCHANGE Semiconductor  Product Specification  isc Silicon PNP Power Transistor  2SA1964  DESCRIPTION  ·Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­160V(Min)  ·Good Linearity of hFE  ·Wide Area of Safe Operation  ·Complement to Type 2SC5248  APPLICATIONS  ·Power amplifier applications.  ·Driver stage amplifier applications.  ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  SYMBOL  PARAMETER  VALUE  UNIT  VCBO  Collector­Base Voltage  ­160  V  VCEO  Collector­Emitter Voltage  ­160  V  VEBO  Emitter­Base Voltage  ­5  V  IC  Collector Current­Continuous  Collector Power Dissipation  @Ta=25℃  ­1.5  A  2  W  PC  Collector Power Dissipation  @TC=25℃  TJ  Junction Temperature  20  150  ℃  Tstg  Storage Temperature  ­55~150  ℃ isc website：www.iscsemi.
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