Datasheet Details
| Part number | A1002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 113.70 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | A1002-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification .
| Part number | A1002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 113.70 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | A1002-INCHANGE.pdf |
|
|
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·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 120 V VCEO CollectorEmitter Voltage 120 V VEBO EmitterBase Voltage 6 V IC Collector CurrentContinuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 12 A 120 W 150 ℃ 55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO CollectorEmitter Breakdown Voltage IC= 30mA; IB= 0 120 V V(BR)CBO CollectorBase Breakdown Voltage IC= 1mA; IE= 0 120 V V(BR)EBO EmitterBase Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) CollectorEmitter Saturation Voltage IC= 8A; IB= 0.8A ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 V 50 μA 50 μA hFE DC Current Gain IC= 0.5A ; VCE= 5V 50 200 fT CurrentGain—Bandwidth Product IC= 1A ; VCE= 10V 40 MHz isc website：www.iscsemi.cn 2
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