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A1002 - Silicon PNP Power Transistor

Description

High Current Capability  Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­120V(Min.)  APPLICATIONS 

Designed for audio and general purpose applications.

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Datasheet Details

Part number A1002
Manufacturer Inchange Semiconductor
File Size 113.70 KB
Description Silicon PNP Power Transistor
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    Full PDF Text Transcription

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    INCHANGE Semiconductor  isc Silicon PNP Power Transistor  isc Product Specification  2SA1002  DESCRIPTION  ·High Current Capability  ·Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­120V(Min.)  APPLICATIONS  ·Designed for audio and general purpose applications.  ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  SYMBOL  PARAMETER  VALUE  UNIT  VCBO  Collector­Base Voltage  ­120  V  VCEO  Collector­Emitter Voltage  ­120  V  VEBO  Emitter­Base Voltage  ­6  V  IC  Collector Current­Continuous  Collector Power Dissipation  PC  @TC=25℃  Tj  Junction Temperature  Tstg  Storage Temperature  ­12  A  120  W  150  ℃  ­55~150  ℃ isc website：www.iscsemi.
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