Download 8ETU04S Datasheet PDF
Inchange Semiconductor
8ETU04S
FEATURES - Ultrafast Recovery Time - Low Forward Voltage Drop - Low Leakage Current - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - This power rectifier is specifically designed for use as damper diode in horizontal deflection circuits for high and very high resolution monitors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current VALUE UNIT Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- A wave, single phase, 60Hz) Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT ℃/W 8ETU04S isc website:.iscsemi. 1 isc & iscsemi is registered trademark Ultrafast Rectifier ELECTRICAL CHARACTERISTICS(Ta=25℃)...