Datasheet Details
| Part number | 3DD13009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.12 KB |
| Description | NPN Transistor |
| Download | 3DD13009 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009.
| Part number | 3DD13009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.12 KB |
| Description | NPN Transistor |
| Download | 3DD13009 Download (PDF) |
|
|
|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 6 A 130 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A IEBO Emitter Cutoff Current VEB= 7V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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3DD13009 | NPN Transistor | LGE |
| Dayan Technology | 3DD13009 | NPN Transistor | Dayan Technology |
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3DD13009 | NPN Silicon Epitaxial Planar Transistor | GME |
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3DD13009A8 | Silicon NPN Transistor | Huajing Microelectronics |
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3DD13009A9 | Silicon NPN bipolar transistor | Huajing Microelectronics |
| Part Number | Description |
|---|---|
| 3DD13009K | NPN Transistor |
| 3DD13009N | NPN Transistor |
| 3DD13009NL | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |