With TO-3
High DC Current Gain-
: hFE >10@IC= 1.5A
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 180V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA
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isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 ·High DC Current Gain-
: hFE >10@IC= 1.5A ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 180V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation
50
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
3DA27C
isc website：www.iscsemi.
3DA27C Datasheet
