3DA27C - NPN Transistor

Datasheet Summary

Description

With TO-3 High DC Current Gain- : hFE >10@IC= 1.5A High Collector-Emitter Breakdown Voltage- V(BR)CEO= 180V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

INCHANGE

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Datasheet Details

Part number	3DA27C
Manufacturer	INCHANGE
File Size	221.04 KB
Description	NPN Transistor
Datasheet	3DA27C Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 ·High DC Current Gain- : hFE >10@IC= 1.5A ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 180V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation 50 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ 3DA27C isc website：www.iscsemi.

Published: Nov 25, 2020 |