3DA27C transistor equivalent, npn transistor.
*Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
2.
*With TO-3
*High DC Current Gain-
: hFE >10@IC= 1.5A
*High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 180V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power dissipati.
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