Datasheet4U Logo Datasheet4U.com

2SK789 - N-Channel MOSFET

Description

Drain Current ID=15A@ TC=25℃ Drain Source Voltage- : VDSS= 450V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switchin

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK789 N-Channel MOSFET Toshiba Semiconductor
2SK784 N-Channel MOSFET NEC
2SK785 N-Channel MOSFET NEC
2SK786 N-Channel MOSFET NEC Electronics
2SK787 N-Channel MOSFET NEC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK783 N-Channel MOSFET
2SK787 N-Channel MOSFET
2SK757 N-Channel MOSFET
2SK763 N-Channel MOSFET
2SK765A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Published: |