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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
6
A
ID(puls)
Pulsed drain current
24
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.
2SK2850 Datasheet
