Datasheet4U Logo Datasheet4U.com

2SD998 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Complement to Type 2SB778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequ

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD998 SILICON POWER TRANSISTOR SavantIC
2SD992-Z NPN Silicon Transistor NEC
2SD995 NPN Transistor Sanyo Semicon Device
2SD999 NPN Silicon Transistor NEC
2SD999 Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD993 NPN Transistor
2SD900 NPN Transistor
2SD904 NPN Transistor
2SD907 NPN Transistor
2SD909 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB778 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
Published: |