2SD880 transistor equivalent, npn transistor.
*Designed for use in audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 3.0A
*Complement to Type 2SB834
*Minimum Lot-to-Lot variations for robust device
performance and reliable.
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