Datasheet4U Logo Datasheet4U.com

2SD859 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF power amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD850 SILICON POWER TRANSISTOR SavantIC
2SD851 NPN Transistor ETC
2SD852 NPN Transistor ETC
2SD856 Si NPN Transistor ETC
2SD856A Si NPN Transistor ETC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD855 NPN Transistor
2SD856 NPN Transistor
2SD857 Silicon NPN Power Transistor
2SD858 Silicon NPN Power Transistor
2SD800 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SD859 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.75 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |