2SD803 transistor equivalent, npn transistor.
*Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
.
*Built-in Base-Emitter Shunt Resistors
*High DC current gain-
hFE = 2000 (Min) @ IC =1 Adc
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
per.
Image gallery
TAGS
Download (Size : 200.26KB)