2SD798
2SD798 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4A
- High DC Current Gain
: h FE= 1500(Min) @ IC= 2A, VCE= 2V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in high-voltage switching igniter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS...
