| Description | ·High DC Current Gain ·Low Collector Saturation Voltage ·Excellent Safe Operating Area ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor controls ·Inverters，choppers ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector... |
| Features |
GE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD711
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
500
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
500
V
VCEO(SUS) Collector-Emitter Sus...
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| Datasheet |
 2SD711 Datasheet - 180.31KB |
