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2SD711 INCHANGE NPN Transistor

Description ·High DC Current Gain ·Low Collector Saturation Voltage ·Excellent Safe Operating Area ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor controls ·Inverters,choppers ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector...
Features GE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 500 V VCEO(SUS) Collector-Emitter Sus...

Datasheet PDF File 2SD711 Datasheet - 180.31KB

2SD711  






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