2SD687 transistor equivalent, npn transistor.
*Switching applications.
*Hammer drive, pulse motor drive applications.
*Power amplifier applications.
ABSO.
*High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 40V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 2A
*Minimum Lot-to-Lot variations for robust device
pe.
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