2SD669 transistor equivalent, npn transistor.
*Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Bas.
*High Collector Current-IC= 1.5A
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
*Complement to Type 2SB649
*Minimum Lot-to-Lot variations for robust device
perfo.
Image gallery
TAGS
Download (Size : 205.44KB)