2SD628 transistor equivalent, silicon npn darlington power transistor.
*Designed for low frequency power amplifier and high current
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=2.
*Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 100V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= 5A
*Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 5A
*Complement to Type 2SB638
*Minimum Lot-to-Lot varia.
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