2SD389 transistor equivalent, npn transistor.
*Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
VALUE
UNIT.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Wide Area of Safe Operation
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for medium .
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