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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD297
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min) ·Collector Power Dissipation-
: PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
IB
Base Current
1
A
PC
Collector Power Dissipation@TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.
2SD297 Datasheet
