2SD2549 transistor equivalent, npn transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Low Collector Saturation Voltgae-
: VCE(sat)= 0.7V(Max.)@ IC= 3A
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
A.
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