2SD2328 transistor equivalent, npn transistor.
*Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Bas.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and rel.
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