2SD2256 transistor equivalent, silicon npn darlington power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE U.
*High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V
*High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min)
APPLICATIONS
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PAR.
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